EASYGAN

EasyGaN is a startup providing epitaxy solutions to unleash the full potential of GaN-on-Silicon technology. Located in Sophia Antipolis, EasyGaN is a CRHEA-CNRS spin-off, an internationally recognized Research Center with 20+ years of experience in the epitaxial growth of GaN. We develop advanced substrates for the GaN on Silicon semiconductor market using the Molecular Beam Epitaxy technique. Our first product is a very thin high-quality Aluminium Nitride (AlN) layer grown on top of a silicon wafer. This so-called ''AlN template'' is already available and is currently being tested by customers as ideal starting point for their GaN epitaxy. In addition, we are currently developing an ultra-thin GaN on Silicon epiwafer for the Radio Frequency 5G millimeter wave device market. Future telecommunications networks (5G+, 6G) require much higher frequencies than current systems (millimetre Waves or mmWaves). Contrary to "standard" chips, mmWave-enabling chips require advanced substrates with improved performance compared to standard silicon. Existing technologies for these advanced substrates are insufficient: they are either highly- performant but expensive, or relatively affordable but with insufficient performance. Affordability is a key pain point because these future networks will require billions of chips to be produced each year for wide-scale deployment. 

EasyGaN develops a new process which will allow to produce affordable, high-performance epitaxial wafers (advanced substrates for chip manufacturing), meeting the requirements for the wide-scale deployment of 5G+ (and later, 6G) networks.
This solution allows to break the performance barriers of standard GaN-on-Silicon technologies, thus reaching the performance level of the very expensive GaN-on-SiC (GaN on Silicon Carbide), needed for the high frequencies of mmWaves. 

Our goal is to bring to the market a new epitaxial wafer called LeanGaN,  with epitaxial layers three times thinner than existing products. In addition to the benefits in terms of durability and thermal resistance allowed by this thinness, EasyGaN's specific epitaxy processes and architecture have been shown to break key bottlenecks in terms of power efficiency. This unlocks the usage of carrier frequencies as high as 94GHz. This innovation is also even less expensive than current GaN-on-Silicon technologies thanks to lower consumption of raw materials (especially Gallium and Ammonia).